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document number: 93184 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast recovery diodes (t-modules), 40 a/70 a/85 a t40hfl, t70hfl, t85hfl series vishay semiconductors features ? fast recovery time characteristics ? electrically isolated base plate ? 3500 v rms isolating voltage ? standard jedec package ? simplified mechanical designs, rapid assembly ? large creepage distances ? ul e78996 approved ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description the series of t-modules uses fast recovery power diodes in a single diode configuration. the semiconductors are electrically isolated from the metal base, allowing common heatsink and compact as semblies to be built. these single diode modules can be used in conjunction with the thyristor modules as a freewheel diode. application includes self-commutated inve rters, dc choppers, motor control, inductive heating and electronic welders. these modules are intended for those applications where very fast recovery characteristics are re quired and for general power switching applications. product summary i f(av) 40 a/70 a/85 a type modules - diode, fast d-55 major ratings and characteristics symbol characteristics t40hfl t70hfl t85hfl units i f(av) 40 70 85 a i f(rms) 63 110 133 a i fsm 50 hz 475 830 1300 a 60 hz 500 870 1370 i 2 t 50 hz 1130 3460 8550 a 2 s 60 hz 1030 3160 7810 v rrm range 100 to 1000 v t rr range 200 to 1000 ns t j range - 40 to 125 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93184 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-may-10 t40hfl, t70hfl, t85hfl series vishay semiconductors fast recovery diodes (t-modules), 40 a/70 a/85 a electrical specifications voltage ratings type number voltage code t rr code v rrm, maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 25 c a t40hfl.. t70hfl.. t85hfl.. 10 s02, s05, s10 100 150 100 20 s02, s05, s10 200 300 40 s02, s05, s10 400 500 60 s02, s05, s10 600 700 80 s05, s10 800 900 100 s05, s10 1000 1100 forward conduction parameter symbol test conditions t40hfl t70hfl t85hfl units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 40 70 85 a 70 c maximum rms forward current i f(rms) 63 110 133 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal ha lf wave, initial t j = t j maximum 475 830 1300 a t = 8.3 ms 500 870 1370 t = 10 ms 100 % v rrm reapplied 400 700 1100 t = 8.3 ms 420 730 1150 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1130 3460 8550 a 2 s t = 8.3 ms 1030 3160 7810 t = 10 ms 100 % v rrm reapplied 800 2450 6050 t = 8.3 ms 730 2230 5520 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no vo ltage reapplied 11 300 34 600 85 500 a 2 s low level value of threshold voltage v f(to)1 t j = 25 c, (16.7 % x x i f(av) < i < x i f(av) ) 0.82 0.87 0.84 v high level value of threshold voltage v f(to)2 t j = 25 c, (i > x i f(av) ) 0.84 0.90 0.86 low level value of forward slope resistance r f1 t j = 25 c, (16.7 % x x i f(av) < i < x i f(av) ) 7.0 2.77 2.15 m high level value of forward slope resistance r f2 t j = 25 c, (i > x i f(av) ) 6.8 2.67 2.07 maximum forward voltage drop v fm i fm = x i f(av) , t j = 25 c, t p = 400 s square wave average power = v f(to) x i f(av) + r f x (i f(rms) ) 2 1.60 1.73 1.55 v
document number: 93184 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 t40hfl, t70hfl, t85hfl series fast recovery diodes (t-modules), 40 a/70 a/85 a vishay semiconductors note (1) tested on lem 300 a diodemeter tester note (1) a mounting compound is re commended and the torque should be rechecked after a period of about 3 hours to allow for the spread o f the compound note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc reverse recovery characteristics parameter symbol test conditions (1) t40hfl t70hfl t85hfl units s02 s05 s10 s02 s05 s10 s02 s05 s10 maximum reverse recovery time t rr t j = 25 c, -di f /dt = 100 a/s i f = 1 a to v r = 30 v 70 110 270 70 110 270 80 120 290 ns t j = 25 c, -di f /dt = 25 a/s i fm = x rated i f(av) , v r = - 30 v 200 500 1000 200 500 1000 200 500 1000 maximum reverse recovery charge q rr t j = 25 c, -di f /dt = 100 a/s i f = 1 a to v r = 30 v 0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6 c t j = 25 c, -di f /dt = 25 a/s i fm = x rated i f(av) , v r = - 30 v 0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5 blocking parameter symbol test conditio ns t40hfl t70hfl t85hfl units maximum peak reverse leakage current i rrm t j = 125 c 20 ma rms isolation voltage v isol 50 hz, circuit to ba se, all terminals shorted, t j = 25 c, t = 1 s 3500 v thermal and mechanical specifications parameter symbol test conditions t40hfl t70hfl t85hfl units junction operating temperature range t j - 40 to 125 c storage temperature range t stg - 40 to 150 maximum internal thermal resistance, junction to case per module r thjc dc operation 0.85 0.53 0.46 k/w thermal resistance, case to heatsink per module r thcs mounting surface, flat, smooth and greased 0.2 mounting torque 10 % base to heatsink m3.5 mounting screws (1) non-lubricated threads 1.3 10 % nm busbar to terminal m5 screws terminals non-lubricated threads 3 10 % approximate weight see dimensions - link at the end of datasheet 54 g 19 oz. case style d-55 (t-module) r conduction devices sinusoidal conduction at t j maximum rectangular conduction at t j maximum units 180 120 90 60 30 180 120 90 60 30 t40hfl 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24 k/w t70hfl 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19 t85hfl 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93184 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-may-10 t40hfl, t70hfl, t85hfl series vishay semiconductors fast recovery diodes (t-modules), 40 a/70 a/85 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - current ratings characteristics fig. 6 - current ratings characteristics 50 60 70 80 90 100 110 120 130 0 1020304050 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) t4 0 h fl. . se r i e s r (dc) = 0.85 k/ w thjc 50 60 70 80 90 100 110 120 130 0 10203040506070 dc 30 60 90 120 180 maximum allowable case temperature (c) conduc tion period average forward current (a) t4 0 h fl. . se r i e s r (dc) = 0.85 k/ w thjc 50 60 70 80 90 100 110 120 130 0 1020304050607080 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) t7 0 h fl. . se r i e s r ( d c ) = 0 . 5 3 k/ w thjc 50 60 70 80 90 100 110 120 130 0 20406080100120 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) t7 0 h fl. . se r i e s r (dc) = 0.53 k/ w thjc 50 60 70 80 90 100 110 120 130 0 102030405060708090 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forwa rd current (a) t8 5 h fl. . se r i e s r (dc) = 0.46 k/ w thjc 50 60 70 80 90 100 110 120 130 020406080100120140 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average forward current (a) t8 5 h fl. . se r i e s r ( dc ) = 0 . 46 k/ w thjc
document number: 93184 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 t40hfl, t70hfl, t85hfl series fast recovery diodes (t-modules), 40 a/70 a/85 a vishay semiconductors fig. 7 - forward power loss characteristics fig. 8 - forward power loss characteristics fig. 9 - forward power loss characteristics fig. 10 - forward power loss characteristics fig. 11 - forward power loss characteristics fig. 12 - forward power loss characteristics 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 average forward current (a) rm s lim it maximum average forward power loss (w) conduction angle 180 120 90 60 30 t4 0 h fl . . se r i e s t = 1 2 5 c j 0 10 20 30 40 50 60 70 80 90 0 10203040506070 dc 180 120 90 60 30 rm s li m i t conduction period average forward current (a) ma ximum average forward power lo ss (w) t4 0 h fl. . se r i e s t = 125c j 0 10 20 30 40 50 60 70 80 90 100 0 10203040506070 average forward current (a) rm s li m i t maximum average forward power loss (w) conduction angle 180 120 90 60 30 t7 0 h fl. . se r i e s t = 125c j 0 20 40 60 80 100 120 140 020406080100120 dc 180 120 90 60 30 rm s li m i t conduc tion period avera g e fo rwa rd current (a) maximum average forward power loss (w) t70hfl.. series t = 1 2 5 c j 0 10 20 30 40 50 60 70 80 90 100 110 0 102030405060708090 average forward current (a) rm s li m i t maximum average forward power loss (w) conduction angle 180 120 90 60 30 t85hfl.. series t = 125c j 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 dc 180 120 90 60 30 rm s li m i t conduction period average forward current (a) maximum average forward power loss (w) t85hfl.. series t = 1 2 5 c j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93184 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-may-10 t40hfl, t70hfl, t85hfl series vishay semiconductors fast recovery diodes (t-modules), 40 a/70 a/85 a fig. 13 - maximum non-re petitive surge current fig. 14 - maximum non-re petitive surge current fig. 15 - maximum non-re petitive surge current fig. 16 - maximum non-re petitive surge current fig. 17 - maximum non-re petitive surge current fig. 18 - maximum non-re petitive surge current 100 150 200 250 300 350 400 450 110100 pe a k ha lf s ine wave forwa rd current (a) number of equal amplitude half cycle current pulses (n) t4 0 hfl. . se r i e s init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with ra t e d v a p p l i e d fo l l o w i n g su r g e . rrm j 100 150 200 250 300 350 400 450 500 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) maximum non rep etitive surge current t4 0 hfl. . se r i e s init ia l t = 125c no volta ge rea p plied ra t e d v re a p p l i e d versus pulse train duration. rrm j 200 300 400 500 600 700 800 110100 pea k half sine wave forwa rd current (a) number of equal amplitude half cycle current pulses (n) t70hfl.. series initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. j rrm 150 250 350 450 550 650 750 850 0.01 0.1 1 pe a k ha lf sin e wa ve fo rw a rd curre n t (a ) pu lse t ra in dura tion (s) maximum non repetitive surge current t7 0 hfl. . se r i e s initia l t = 125c no volta ge rea pplied ra ted v rea pplied versus pulse train duration. rrm j 300 400 500 600 700 800 900 1000 1100 1200 110100 peak half sine wave forwa rd current (a) number of equal amplitude half cyc le current pulses (n) t85hfl.. series initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v ap p lied following surge. rrm j 300 400 500 600 700 800 900 1000 1100 1200 1300 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) ma ximum non rep etitive surge current initia l t = 125c no vo lta g e rea p p lied rated v reapplied versus pulse train duration. rrm j t8 5 hfl . . se r i e s
document number: 93184 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 t40hfl, t70hfl, t85hfl series fast recovery diodes (t-modules), 40 a/70 a/85 a vishay semiconductors fig. 19 - recovery time characteristics fig. 20 - recovery charge characteristics fig. 21 - recovery current characteristics fig. 22 - recovery time characteristics fig. 23 - recovery charge characteristics fig. 24 - recovery current characteristics 0.45 0.46 0.47 0.48 0.49 0.5 0.51 0 0 1 0 1 100a 220a 172a 50a ra te of fa ll of forwa rd current - di/ d t (a/ s) maximum reverse recovery time - trr (s) i = 300a fm t4 0 h fl. . s0 2 t7 0 h fl. . s0 2 t = 1 2 5 c j 1 2 3 4 5 6 7 8 10 20 30 40 50 60 70 80 90 100 100a 220a 172a 50a ra te of fa ll of forward current - di/dt (a/s) ma xim um re ve rse re c o ve ry cha rg e - qrr (c) i = 300a fm t4 0 h fl. . s0 2 t7 0 h fl. . s0 2 t = 1 2 5 c j 4 6 8 10 12 14 16 18 20 10 20 30 40 50 60 70 80 90 100 100a 220a 172a 50a ra te of fall of forward current - di/d t (a/s) maximum reverse recovery current - irr (a) i = 300a t4 0 h fl. . s0 2 t7 0 h fl. . s0 2 t = 1 2 5 c fm j 0.6 0.7 0.8 0.9 1 1.1 0 0 1 0 1 100a 220a 172a 50a maximum reverse rec overy time - trr (s) rate of fall of forward current - di/dt (a/s) i = 300a fm t4 0 h fl. . s0 5 t7 0 h fl. . s0 5 t = 1 2 5 c j 4 6 8 10 12 14 16 18 20 10 20 30 40 50 60 70 80 90 100 ra te of fa ll of forwa rd current - d i/ d t (a/ s) maximum reverse recovery charge - qrr (c) 220a 172a 100a 50a i = 300a fm t4 0 hfl. . s0 5 t7 0 hfl. . s0 5 t = 1 2 5 c j 6 8 10 12 14 16 18 20 22 24 26 28 10 20 30 40 50 60 70 80 90 100 220a 172a 100a 50a m a ximum reve rse rec o ve ry current - irr ( a) rate of fall of forward current - di/dt (a/s) i = 300a fm t4 0 h fl . . s0 5 t7 0 h fl . . s0 5 t = 125 c j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93184 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-may-10 t40hfl, t70hfl, t85hfl series vishay semiconductors fast recovery diodes (t-modules), 40 a/70 a/85 a fig. 25 - recovery time characteristics fig. 26 - recovery charge characteristics fig. 27 - recovery current characteristics fig. 28 - recovery time characteristics fig. 29 - recovery charge characteristics fig. 30 - recovery current characteristics 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 0 1 0 1 100a 50a 200a maximum reverse recovery time - trr (s) rate of fall of forward current - di/d t (a/s) i = 300a fm t4 0 h fl . . s1 0 t7 0 h fl . . s1 0 t = 125 c j 5 10 15 20 25 30 35 40 10 20 30 40 50 60 70 80 90 100 100a 50a 200a maximum reverse re covery charge - qrr (c) ra te of fa ll of fo rwa rd current - d i/ d t (a/ s) i = 300a fm t4 0 hfl. . s1 0 t7 0 hfl. . s1 0 t = 1 2 5 c j 10 15 20 25 30 35 40 45 10 20 30 40 50 60 70 80 90 100 100a 50a 200a maximum reverse rec overy current - irr (a) ra te of fa ll of forwa rd current - di/ d t (a/ s) i = 300a fm t4 0 h fl. . s1 0 t7 0 h fl. . s1 0 t = 1 2 5 c j 0.6 0.7 0.8 0.9 1 1.1 1.2 0 0 1 0 1 100a 50a 200a ma xim um reverse re c ove ry tim e - trr ( s) rate of fall of forward current - di/dt (a/s) t8 5 h fl. . s0 2 t = 1 2 5 c i = 300a j fm 5 10 15 20 25 10 20 30 40 50 60 70 80 90 100 200a 100a 50a maximum reverse recovery charge - qrr (c) rate of fall of forward current - di/dt (a/s) t8 5 h fl. . s0 2 t = 1 2 5 c i = 300a j fm 6 8 10 12 14 16 18 20 22 24 26 28 10 20 30 40 50 60 70 80 90 100 200a 100a 50a ma xim um reve rse rec o ve ry c urre nt - irr (a) ra t e o f fa l l o f fo r w a r d c u r r e n t - d i / d t ( a / s) t8 5 h fl. . s0 2 t = 125c i = 300a j fm
document number: 93184 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 9 t40hfl, t70hfl, t85hfl series fast recovery diodes (t-modules), 40 a/70 a/85 a vishay semiconductors fig. 31 - recovery time characteristics fig. 32 - recovery charge characteristics fig. 33 - recovery current characteristics fig. 34 - recovery time characteristics fig. 35 - recovery charge characteristics fig. 36 - recovery current characteristics 0.8 0.9 1 1.1 1.2 1.3 0 0 1 0 1 100a 50a 200a ma ximum reverse rec overy time - trr (s) rate of fall of forward current - di/dt (a/s) i = 300a t8 5 h fl. . s0 5 t = 1 2 5 c fm j 6 9 12 15 18 21 24 27 30 10 20 30 40 50 60 70 80 90 100 200a maximum reverse recovery charge - qrr (c) ra t e o f fa l l o f fo r w a rd c u rr e n t - d i / d t ( a / s) t8 5 h fl. . s0 5 t = 1 2 5 c 100a 50a j i = 300a fm 10 15 20 25 30 35 10 20 30 40 50 60 70 80 90 100 100a 50a 200a maximum reverse rec overy current - irr (a) ra t e o f fa l l o f fo r w a r d c u r re n t - d i / d t ( a / s) t8 5 h fl. . s0 5 t = 125c i = 300a j fm 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 0 0 1 0 1 100a 50a 200a maximum reverse recovery time - trr (s) rate of fall of forward current - di/dt (a/s) t8 5 h fl. . s1 0 t = 125c i = 300a j fm 10 15 20 25 30 35 40 45 50 55 10 20 30 40 50 60 70 80 90 100 200a maximum reverse recovery charge - qrr (c) ra te of fall of forward current - di/dt (a/s) 100a 50a t8 5 h fl. . s1 0 t = 125c j i = 300a fm 15 20 25 30 35 40 45 50 55 60 10 20 30 40 50 60 70 80 90 100 100a 50a 200a ma ximum reverse rec overy current - irr (a) i = 300a t8 5 h fl. . s1 0 t = 125c rate of fall of forward current - di/dt (a/s) fm j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93184 10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-may-10 t40hfl, t70hfl, t85hfl series vishay semiconductors fast recovery diodes (t-modules), 40 a/70 a/85 a fig. 37 - frequency characteristics fig. 38 - frequency characteristics fig. 39 - maximum forward energy power loss characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 1000 200 1500 2500 10000 20000 5000 peak forward current (a) pu lse ba se w id t h ( s) tp 1e4 t4 0 h fl. . se r i e s si n u so i d a l p u l s e t = 70c c 1 e1 1 e2 1 e3 1 e4 50 hz 400 1000 200 1500 2500 5000 pu lse ba se w i d t h ( s) t4 0 h fl . . s eries tr a p e z o i d a l p u l se t = 7 0 c c tp 1e1 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 10000 20000 5000 peak forward current (a) pulse basewidth (s) tp 1e4 si n u so i d a l pu l se t = 90c c t 40hfl.. series e1 1e2 1e3 1 e4 50 hz 400 1000 200 1500 2500 5000 pu lse ba se w id t h ( s) tr a p e zo i d a l pu l se tp t4 0 h fl. . 1e1 t = 9 0 c c 1e0 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 0.01 0.02 0.04 0.1 0.2 0.4 1 2 4 10 20 joules p er p ulse peak forward current (a) pulse basewidth (s) tp 1e4 t40hfl.. series sinuso id a l pulse t = 125 c j 1 e1 1 e2 1 e3 1 e4 0.01 0.02 0.04 0.1 0.2 0.4 1 2 4 10 20 joules p er pulse tr a p e z o i d a l p u l se pu lse ba se w i d t h ( s) t 40hfl.. series t = 125c di/dt = 50a/s 1e1 tp j
document number: 93184 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 11 t40hfl, t70hfl, t85hfl series fast recovery diodes (t-modules), 40 a/70 a/85 a vishay semiconductors fig. 40 - frequency characteristics fig. 41 - frequency characteristics fig. 42 - maximum forward energy power loss characteristics 1e1 1e2 1e3 1e4 1 e1 1 e2 1e3 1 e4 50 hz 400 1000 200 1500 2500 10000 20000 5000 peak forward current (a) pu lse ba se w id t h ( s) tp 1e4 t7 0 h fl. . se r i e s s inuso id a l pulse t = 7 0 c c 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 5000 pu l se ba se w id t h ( s) tp 1e1 t 70hfl.. series tr a p e z o i d a l p u l se t = 70c c 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 10000 20000 5000 pe a k fo rw a rd c urre n t ( a ) pu l se ba se w i d t h ( s) tp 1e4 t7 0 h fl. . se r i e s sinusoid al pulse t = 90c c 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 5000 pu l se ba se w i d t h ( s) tp 1e1 t7 0 h fl. . se r i e s tr a p e z o i d a l p u l se t = 90c c 1e0 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 0.01 0.02 0.04 0.1 0.2 0.4 1 2 4 10 20 joules per pulse peak forward current (a) pu lse ba se w id t h ( s) tp 1e4 t7 0 h fl. . se r i e s si n u so i d a l pu l se t = 125c j 1e11e21e31e4 0.1 20 joules per pulse 10 4 2 1 0.4 0.2 0.04 0.02 0.01 t7 0 h fl. . se r i e s trapezoidal pulse t = 125c di/dt = 50a/s pulse basewidth (s) 1e1 tp j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93184 12 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-may-10 t40hfl, t70hfl, t85hfl series vishay semiconductors fast recovery diodes (t-modules), 40 a/70 a/85 a fig. 43 - frequency characteristics fig. 44 - frequency characteristics fig. 45 - maximum forward energy power loss characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 10000 20000 5000 pu l se ba se w id t h ( s) peak forward current (a) tp 1e4 t85hfl.. series si n u so i d a l pu l se t = 7 0 c c 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 5000 pu lse ba se w id t h ( s) tp 1e1 t85hfl.. se rie s tr a p e z o i d a l pu l se t = 70c c 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 10000 20000 5000 peak forward current (a) pu lse ba se w i d t h ( s) tp 1e4 t 85hfl.. series s inusoid a l pulse t = 90c c 1e1 1e2 1e3 1e4 50 hz 400 1000 200 1500 2500 5000 pu l se ba se w i d t h ( s) tp 1e1 t 85hfl.. series trapezoidal pulse t = 90c c 1e0 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 0.01 0.02 0.04 0.1 0.2 0.4 1 2 4 10 20 joules per pulse pe a k fo rw a rd c u rre n t ( a ) pu l se ba se w id t h ( s) tp 1e4 t 85hfl.. series si n u so i d a l pu l se t = 125 c j 1e11e21e31e4 0.01 0.02 0.04 0.1 0.2 0.4 1 2 4 10 20 joules p er p ulse pulse basewidth (s) tp 1e1 t8 5 h fl. . se r i e s t rap ezoid al pulse t = 125c di/dt = 50a/s j
document number: 93184 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 13 t40hfl, t70hfl, t85hfl series fast recovery diodes (t-modules), 40 a/70 a/85 a vishay semiconductors fig. 46 - forward voltage drop characteristics fig. 47 - forward voltage drop characteristics fig. 48 - forward voltage drop characteristics fig. 49 - thermal impedance z thjc characteristics 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 t = 25c j instantaneous forward current (a) instantaneous forward voltage (v) t = 1 2 5 c j t4 0 h fl. . se r i e s 1 10 100 1000 10000 01234567 t = 2 5 c j in st a n t a n e o u s fo r w a rd c u rr e n t ( a ) instantaneous forward voltage (v) t7 0 hfl. . se r i e s t = 1 2 5 c j 10 100 1000 10000 01234567 t = 2 5 c j instantaneous forward current (a) instantaneous forward voltage (v) t = 1 2 5 c j t8 5 h fl. . se r i e s 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 s quare wave pulse duration (s) thjc tr a n si e n t th e r m a l i m p e d a n c e z ( k/ w) st e a d y st a t e v a l u e : r = 0.85 k/ w r = 0.53 k/ w r = 0.46 k/ w (dc operation) t4 0 hfl. . se r i e s t7 0 hfl. . se r i e s t8 5 hfl. . se r i e s thjc thjc thjc
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93184 14 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-may-10 t40hfl, t70hfl, t85hfl series vishay semiconductors fast recovery diodes (t-modules), 40 a/70 a/85 a ordering information table circuit configuration circuit circuit configuration code circuit drawing single switch diode n/a links to related documents dimensions www.vishay.com/doc?95313 1 - module type 2 - current rating 3 - fast recovery diode 4 - voltage code x 10 = v rrm 5 -t rr code s02 = 200 ns s05 = 500 ns s10 = 1000 ns 40 = 40 a (average) 70 = 70 a (average) 85 = 85 a (average) device code 5 13 24 t 40 hfl 100 s10 +-
document number: 95313 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-jul-08 1 d-55 t-module diode standard and fast recovery outline dimensions vishay semiconductors dimensions in millimeters (inches) 3 (0.12) 3.9 (0.15) 8 (0.31) m5 30 (1.18) 27 (1.06) 41 (1.61) max. 25 1 23.5 (0.93) + - 11 (0.43) 18 (0.71) 15 (0.59)
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